China University of Science and Technology made progress in the research of two-dimensional material semiconductor quantum transistors

China University of Science and Technology made progress in the research of two-dimensional material semiconductor quantum transistors

Professor Quan Guangcan, a member of the Chinese Academy of Sciences and a professor at the China University of Science and Technology, led the CAS Key Laboratory of Quantum Information and made progress in the research of semiconductor gated quantum dots. The Guo Guoping research group and its collaborators of the laboratory have in-depth exploration of the possibility of the application of two-dimensional layered transition metal chalcogenides to semiconductor quantum chips. For the first time in experiments, a fully electronically controlled quantum dot device has been realized in a semiconductor flexible two-dimensional material system. . The results were published online on October 20th in the Science Advances. After decades of development, semiconductor gated quantum dots have become one of the most popular candidates for quantum chips as a quantum transistor. The two-dimensional material system represented by graphene has become one of the key research subjects for flexible electronics and quantum electronics because of its natural monolayer thickness, excellent electrical properties, and ease of integration. However, after more than ten years since the discovery of graphene, scientists have experimented extensively and found that the band structure and interface defect impurities in graphene have a great influence on the performance of quantum dot devices. At present, quantum dots in two-dimensional materials cannot achieve effective electrical regulation.

Based on this, Guo Guoping's research group and its collaborators selected a new two-dimensional material, molybdenum disulfide, for further study. The material has a suitable bandgap, strong spin-orbit coupling strength and abundant spin-energy-growth-related physical phenomena, and has a wide range of applications in quantum electronics, in particular spintronics and Nenggu electronics. prospect. After a large number of trials, researchers used micro-nano processing, low-temperature LED irradiation and a series of modern semiconductor processing methods, combined with the current boron nitride packaging technology widely used in the two-dimensional material system research, effectively reducing the impurities in the quantum dot structure, Defects, etc., for the first time in this kind of material to achieve a fully electronically controlled dual quantum dot structure. At a very low temperature, a single quantum dot with a size of about 128 nm can be modulated into two single-dot double quantum dot systems with a size of about 68 nm by the electrode voltage. The inter-dot electron tunneling of the double quantum dot system can be achieved by The monotonous regulation of the electrode voltage enables the electrically controllable modulation of artificial atoms to artificial molecules. This controlled single-electron tunneling device provides a possible platform for studying physical phenomena related to the spin and valley freeness of the material at the single electron level. Using this platform, the researchers observed that the device conductance decreased as the external magnetic field increased. This phenomenon, known as Coulomb blockade and antilocalization, reveals the influence of short-range defects and spin-orbit coupling on electrical transport properties in molybdenum disulfide.

The research work was supported by the State Fund Committee, the Ministry of Science and Technology, the Chinese Academy of Sciences, and the Quantum Information and Quantum Technology Collaborative Innovation Center. Some sample processing procedures were completed at the China University of Science and Technology, Micronano Research and Manufacturing Center.

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